This resulted within a reduced operate function and also the development of a Schottky contact in between the BrGO and n-type Si substrate. Because of the higher proportion of B-C and B-C3 bonding in the BrGO/Si unit than that from the rGO/Si, the diminished Schottky barrier peak of the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/