Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Just one of such specific properties is that gate oxides in SiC-based power devices are generally characterized by a relatively large number of interface states, https://www.quora.com/profile/Trevor-Flatcher-2/Advantages-of-Silicon-Carbide-Materials-in-High-Temperature-Electronic-Devices-Silicon-carbide-SiC-has-emerged-as-a-c